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		    <title>PatentStorm -&gt; Patents -&gt; Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor</title>
		    <link>http://www.patentstorm.us/rss/class/patents/rss-117.xml</link>
		    <description>Recent patents filings in USPTO Class 117 Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor.</description>
		    <pubDate>Tue, 21 May 2013 16:09:19</pubDate>
		    <managingEditor>patents@patentstorm.us</managingEditor>
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			         <title><![CDATA[Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~3/oky5RuVyK94/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8444765&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-21&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~4/oky5RuVyK94" height="1" width="1"/&gt;</description>
			         
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<item>
			         <title><![CDATA[Method for growing group 13 nitride crystal and group 13 nitride crystal]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~3/ehKof2Vcf3s/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8440017&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-14&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~4/ehKof2Vcf3s" height="1" width="1"/&gt;</description>
			         
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			      <feedburner:origLink>http://www.patentstorm.us/patents/8440017/description.html</feedburner:origLink></item>
<item>
			         <title><![CDATA[High pressure apparatus with stackable rings]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~3/Ox3kP7pSRus/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8435347&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-07&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A high pressure apparatus and related methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, at least one ceramic ring with one or more scribe marks and/or cracks present. The apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. The apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~4/Ox3kP7pSRus" height="1" width="1"/&gt;</description>
			         
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<item>
			         <title><![CDATA[Crystallization apparatus, crystallization method, phase modulation element, device and display apparatus]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~3/v6OVrwb2uKI/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8435346&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-07&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predetermined size, and each phase distribution is defined by a change in area shares of the first area and the second area depending on each ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~4/v6OVrwb2uKI" height="1" width="1"/&gt;</description>
			         
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<item>
			         <title><![CDATA[Apparatus and methods for preparation of high-purity silicon rods using mixed core means]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~3/nE0BMCUJOOE/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8430959&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-04-30&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;Disclosed are a method and an apparatus for preparing a polycrystalline silicon rod using a mixed core means, comprising: installing a first core means made of a resistive material together with a second core means made of silicon material in an inner space of a deposition reactor; electrically heating the first core means and pre-heating the second core by the first core means which is electrically heated; electrically heating the preheated second core means; and supplying a reaction gas ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~4/nE0BMCUJOOE" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~3/tlFSPxx_Q6U/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8430958&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-04-30&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;An apparatus and associated method for large-scale manufacturing of gallium nitride. The apparatus comprises a large diameter autoclave or internally-heated high pressure vessel, a seed rack, and a raw material basket. Methods include effective means for utilization of seed crystals. The apparatus and methods are scalable up to very large volumes and are cost ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-Single-crystalOriented-crystalAndEpitaxyGrowthProcessesNon-coatingApparatusThere/~4/tlFSPxx_Q6U" height="1" width="1"/&gt;</description>
			         
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