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		    <title>PatentStorm -&gt; Patents -&gt; Etching a substrate: processes</title>
		    <link>http://www.patentstorm.us/rss/class/patents/rss-216.xml</link>
		    <description>Recent patents filings in USPTO Class 216 Etching a substrate: processes.</description>
		    <pubDate>Tue, 21 May 2013 16:07:01</pubDate>
		    <managingEditor>patents@patentstorm.us</managingEditor>
		    <language>en</language><atom10:link xmlns:atom10="http://www.w3.org/2005/Atom" rel="self" type="application/rss+xml" href="http://feeds.feedburner.com/Patentstorm-Patents-EtchingASubstrateProcesses" /><feedburner:info uri="patentstorm-patents-etchingasubstrateprocesses" /><atom10:link xmlns:atom10="http://www.w3.org/2005/Atom" rel="hub" href="http://pubsubhubbub.appspot.com/" /><item>
			         <title><![CDATA[Inductive plasma source with high coupling efficiency]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/lE0z1G2war0/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8444870&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-21&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/lE0z1G2war0" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Simultaneous front side ash and backside clean]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/joDVdZLZR60/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8444869&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-21&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A method and apparatus for cleaning a wafer. The wafer is heated and moved to a processing station within the apparatus that has a platen either permanently in a platen down position or is transferable from a platen up position to the platen down position. The wafer is positioned over the platen so as not to contact the platen and provide a gap between the platen and wafer. The gap may be generated by positioning the platen in a platen down position. A plasma flows into the gap to enable ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/joDVdZLZR60" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Method for removing copper oxide layer]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/99DL8y74sB4/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8444868&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-21&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;The invention is directed to a method for removing copper oxide from a copper surface to provide a clean copper surface, wherein the method involves exposing the copper surface containing copper oxide thereon to an anhydrous vapor containing a carboxylic acid compound therein, wherein the anhydrous vapor is generated from an anhydrous organic solution containing the carboxylic acid and one or more solvents selected from hydrocarbon and ether ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/99DL8y74sB4" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Method for fabricating patterns on a wafer through an exposure process]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/tWPn-CxnTRE/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8444867&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-21&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A method for forming patterns on a wafer includes forming a fence having a sloped face in an edge portion of the wafer. The sloped face is direct to an inside of the wafer. A first photoresist layer is formed which extends to cover the fence on the wafer. First photoresist patterns are formed by performing a first exposure and development on the first photoresist layer. An etch process is performed using the first photoresist patterns and the fence as an etch mask. The fence is formed by ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/tWPn-CxnTRE" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Method and system for providing a perpendicular magnetic recording pole with a multi-layer side gap]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/ByM0QvdstfA/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8444866&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-21&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; ; ; ; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A method for fabricating a magnetic transducer having a nonmagnetic intermediate layer is described. A trench is provided in the intermediate layer. The trench has a profile and location corresponding to a pole. A first nonmagnetic gap layer is provided. At least part of the first nonmagnetic gap layer resides in the trench. A pole including magnetic material(s) is provided. At least part of the pole resides in the trench and on the part of the nonmagnetic layer in the trench. At least part ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/ByM0QvdstfA" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Magnetic recording head coating and method]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/LQVCuFVARnA/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8444865&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-21&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; ; ; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A method for encapsulating a magnetic recording head including coating at least a portion of a magnetic recording head containing a recording gap with a first layer of at least one coating material, including silicon nitride, the first layer of at least one coating material having a first removal rate, coating at least a portion of the magnetic recording head containing a recording gap and coated with the first layer of at least one coating material with a second layer of at least one ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/LQVCuFVARnA" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Method of polishing a substrate]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/8T9al4Mf3UY/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8440094&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-14&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon dioxide is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon dioxide removal rate selectivity; and wherein a second dilution of the concentrate used to ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/8T9al4Mf3UY" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Methods and devices for electronic and magnetic sensing of the contents of microfluidic flow channels]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/OnKwXD1c8b0/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8440093&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-14&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;The presence of a detectable entity within a detection volume of a microfabricated elastomeric structure is sensed through a change in the electrical or magnetic environment of the detection volume. In embodiments utilizing electronic detection, an electric field is applied to the detection volume and a change in impedance, current, or combined impedance and current due to the presence of the detectable entity is measured. In embodiments utilizing magnetic detection, the magnetic properties ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/OnKwXD1c8b0" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Method for selective etching]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/L3ZHpuHAnGg/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8440092&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-14&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;Method and device for selectively etching a first material (&lt;b&gt;4&lt;/b&gt;) relative to a second material (&lt;b&gt;2&lt;/b&gt;), comprising a bath (&lt;b&gt;11&lt;/b&gt;) of a solution capable of producing at least one chemical species for etching the first material (&lt;b&gt;4&lt;/b&gt;) but not the second (&lt;b&gt;2&lt;/b&gt;) and a system (&lt;b&gt;12&lt;/b&gt;) for generating ultrasound at a frequency between 100 kHz and 3 MHz in the bath in order to produce cavitation ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/L3ZHpuHAnGg" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Magnetic recording medium and method of manufacturing the same]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/1qc45ux4fIA/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8440091&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-14&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;According to one embodiment, a method of manufacturing a magnetic recording medium comprises forming a protective film on a ferromagnetic recording layer containing Cobalt (Co) on a substrate and forming a recess in both the protective film and the ferromagnetic recording layer at a part where a nonmagnetic layer is to be formed. The method further comprises removing Co from a part of the recess of the ferromagnetic recording layer to form the nonmagnetic layer that separates magnetic ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/1qc45ux4fIA" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Apparatus and method of making a variable stiffness multilayer catheter tubing]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/3R4BLLlnp-s/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8440090&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-14&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A catheter body having a variable stiffness along its longitudinal length and a method for manufacturing same is disclosed wherein an inner layer having an uninterrupted length serves as a backbone for segments of coextrusion of, e.g., Pebax or nylon and a tie layer which are then bonded to the backbone to create a multi-stiffness catheter ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/3R4BLLlnp-s" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Three-dimensional structure and its manufacturing method]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/wITNEykx7fE/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8440089&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-14&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; ; ; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A plurality of micro three-dimensional structure elements each having a movable structure fixed on a sacrifice layer, and fixation portions of the micro three-dimensional structure elements for the sacrifice layer are arranged into a film-like elastic body, and then the sacrifice layer is removed. Thus, a three-dimensional structure in which the individual micro three-dimensional structure elements are arranged independently of one another within the elastic body is ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/wITNEykx7fE" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Method of polishing using tunable polishing formulation]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/jpU-1nRcPP8/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8435420&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-07&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon nitride removal rate selectivity; and wherein a second dilution of the concentrate used to ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/jpU-1nRcPP8" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Methods of processing substrates having metal materials]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/sLl1ncsuI-g/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8435419&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-07&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; ; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;Methods of processing substrates having metal layers are provided herein. In some embodiments, a method of processing a substrate comprising a metal layer having a patterned mask layer disposed above the metal layer, the method may include etching the metal layer through the patterned mask layer; and removing the patterned mask layer using a first plasma formed from a first process gas comprising oxygen (O&lt;sub&gt;2&lt;/sub&gt;) and a carbohydrate. In some embodiments, a two step method with an ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/sLl1ncsuI-g" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Ion etching of growing InP nanocrystals using microwave]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/yyFQF_lJFSA/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8435418&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-07&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/yyFQF_lJFSA" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Method of manufacturing semiconductor device]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/bYMnt56gXSo/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8435417&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-07&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A passivation film having a predetermined width from an outer peripheral end portion toward an inner side and extending along the outer peripheral end portion is formed on a front surface of a semiconductor substrate. An outer peripheral end surface orthogonal to the front surface and a rear surface is formed by grinding the outer peripheral end portion of the semiconductor substrate. A thickness of the semiconductor substrate is reduced to a predetermined thickness by grinding the rear ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/bYMnt56gXSo" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Method for manufacturing porous structure and method for forming pattern]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/Q8fuqI3QoYE/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8435416&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-07&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc-No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/Q8fuqI3QoYE" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Nanofabrication process and nanodevice]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/zpM8AbzZtW0/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8435415&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-07&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A nanofabrication process for use with a photoresist that is disposed on a substrate includes the steps of exposing the photoresist to a grayscale radiation pattern, developing the photoresist to remove a irradiated portions and form a patterned topography having a plurality of nanoscale critical dimensions, and selectively etching the photoresist and the substrate to transfer a corresponding topography having a plurality of nanoscale critical dimensions into the ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/zpM8AbzZtW0" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Nozzle plate manufacturing method, nozzle plate, droplet discharge head manufacturing method, droplet discharge head, and printer]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/ySnbpQ09F9I/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8435414&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-05-07&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A nozzle plate manufacturing method that offers excellent protection against discharge liquid, and that enables a nozzle plate having high nozzle-hole accuracy to be manufactured with good yield. The invention also provides a nozzle plate, a droplet discharge head manufacturing method, and a droplet discharge ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/ySnbpQ09F9I" height="1" width="1"/&gt;</description>
			         
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			      <feedburner:origLink>http://www.patentstorm.us/patents/8435414/description.html</feedburner:origLink></item>
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			         <title><![CDATA[Plasma processing apparatus and method]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/PWOZ6lIQNzo/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8431035&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-04-30&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/PWOZ6lIQNzo" height="1" width="1"/&gt;</description>
			         
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			      <feedburner:origLink>http://www.patentstorm.us/patents/8431035/description.html</feedburner:origLink></item>
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			         <title><![CDATA[Manufacturing of nanopores]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/dc1nLgVjIfQ/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8431034&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-04-30&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;The present invention relates to nanopore membranes, methods for manufacturing such nanopore membranes, and uses thereof. In the methods for manufacturing the membranes colloidal lithography is used, which results in production of nanosize pores in a short time and on a large scale. The nanopore membranes have a narrow size distribution and are randomly arranged. Furthermore, the inter-pore distance shows very little ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/dc1nLgVjIfQ" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[High density plasma etchback process for advanced metallization applications]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/2u5F425LSDo/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8431033&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-04-30&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventors:&lt;/strong&gt; &amp;nbsp;; ; ; ; &lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/2u5F425LSDo" height="1" width="1"/&gt;</description>
			         
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			      <feedburner:origLink>http://www.patentstorm.us/patents/8431033/description.html</feedburner:origLink></item>
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			         <title><![CDATA[Method for continual preparation of polycrystalline silicon using a fluidized bed reactor]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/RcwMcPE8DKw/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8431032&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-04-30&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;There is provided a method for continual preparation of granular polycrystalline silicon using a fluidized bed reactor, enabling a stable, long-term operation of the reactor by effective removal of silicon deposit accumulated on the inner wall of the reactor tube. The method comprises (i) a silicon particle preparation step, wherein silicon deposition occurs on the surface of the silicon particles, while silicon deposit is accumulated on the inner wall of the reactor tube encompassing the ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/RcwMcPE8DKw" height="1" width="1"/&gt;</description>
			         
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			         <title><![CDATA[Method for producing a bulk wave acoustic resonator of FBAR type]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/Rsyo1iFpfKk/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8431031&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-04-30&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;A method for fabricating a bulk wave acoustic resonator (FBAR) which includes at least locally a partially suspended thin layer of piezoelectric material, and includes the following steps: the formation of at least one first so-called lower electrode on the surface of a thin layer of piezoelectric material; the deposition of a so-called sacrificial layer on the surface of the said thin layer of piezoelectric material and of the said first electrode defining a first set; the assembling of ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/Rsyo1iFpfKk" height="1" width="1"/&gt;</description>
			         
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			      <feedburner:origLink>http://www.patentstorm.us/patents/8431031/description.html</feedburner:origLink></item>
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			         <title><![CDATA[Process for manufacturing crystal resonator]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/AFj0IGGK9vU/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8431030&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-04-30&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;There is provided a crystal resonator (crystal element) in which the probability of chipping occurring in separation is small when there is one supporting section with respect to a frame section of a crystal wafer, and inclined surfaces due to the anisotropy of etching are eliminated. The present invention relates to a crystal resonator manufacturing method such that an AT-cut crystal wafer is etched, a large number of rectangular crystal elements are joined with frame sections by ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/AFj0IGGK9vU" height="1" width="1"/&gt;</description>
			         
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			      <feedburner:origLink>http://www.patentstorm.us/patents/8431030/description.html</feedburner:origLink></item>
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			         <title><![CDATA[Circuit board and method of manufacturing the same]]></title>
			         <link>http://feedproxy.google.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~3/YvLVXzHxJMQ/description.html</link>
			         <description>&lt;ul&gt;&lt;li&gt;&lt;strong&gt;Patent Number:&lt;/strong&gt; &amp;nbsp;8431029&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Publication Date:&lt;/strong&gt; &amp;nbsp;2013-04-30&lt;/li&gt;&lt;li&gt;&lt;strong&gt;Inventor:&lt;/strong&gt; &amp;nbsp;&lt;/li&gt;&lt;/ul&gt;
&lt;p&gt;Provided are a circuit board and a method of manufacturing the same. The method includes: forming a pad portion and a lead line portion of a metal on an insulating substrate, wherein the lead line portion is connected to the pad portion; forming a conductive layer on the pad portion and the lead line portion, wherein the conductive layer has an upper surface comprising gold; forming an etching mask on the conductive layer so as to expose a portion corresponding to the lead line portion in ...&lt;br /&gt;&lt;img src="http://feeds.feedburner.com/~r/Patentstorm-Patents-EtchingASubstrateProcesses/~4/YvLVXzHxJMQ" height="1" width="1"/&gt;</description>
			         
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			      <feedburner:origLink>http://www.patentstorm.us/patents/8431029/description.html</feedburner:origLink></item>
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